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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3257 DESCRIPTION *With TO-220 package *High collector breakdown voltage *Excellent switching times APPLICATIONS *Switching regulator and high voltage switching applications *High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 250 200 7 10 15 2 1.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=5A;IB=0.5A IC=5A;IB=0.5A VCB=200V;IE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=5A ; VCE=5V 15 20 MIN 200 250 2SC3257 TYP. MAX UNIT V V 1.0 1.5 100 1.0 V V A mA 80 Switching times tr ts tf Rise time Storage time Fall time IB1=-IB2=0.6A;VCC150V RL=25 1.0 2.5 1.0 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3257 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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